The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2007
Filed:
Apr. 19, 2005
Sung-hoon Chung, Gyeonggi-do, KR;
Byeong-yun Nam, Gyeonggi-do, KR;
Kyeong-koo Chi, Seoul, KR;
Abstract
Methods of forming field effect transistors include the steps of forming a first electrically insulating layer on a semiconductor substrate having a plurality of trench isolation regions therein that define an active region therebetween. The first electrically insulating layer is then patterned to define a first plurality of openings therein that extend opposite the active region. A trench mask having a second plurality of openings therein is then formed by filling the first plurality of openings with electrically insulating plugs and then etching the patterned first electrically insulating layer using the electrically insulating plugs as an etching mask. A plurality of trenches are then formed in the active region by etching the semiconductor substrate using the trench mask as an etching mask. A plurality of insulated gate electrodes are then formed that extend into the plurality of trenches.