The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2007
Filed:
May. 20, 2003
Lay Har Angeline Tee, Singapore, SG;
Kim Pong Daniel Chir, Singapore, SG;
Kitt-wai Kok, Singapore, SG;
Kathirgamasundaram Sooriakumar, Singapore, SG;
Bryan Keith Patmon, Singapore, SG;
Lay Har Angeline Tee, Singapore, SG;
Kim Pong Daniel Chir, Singapore, SG;
Kitt-Wai Kok, Singapore, SG;
Kathirgamasundaram Sooriakumar, Singapore, SG;
Bryan Keith Patmon, Singapore, SG;
Sensfab Pte Ltd, Singapore, SG;
Abstract
The invention relates to a method for forming silicon atomic force microscope tips. The method includes the steps of depositing a masking layer onto a first layer of doped silicon so that some square or rectangular areas of the first layer of doped silicon are not covered by the masking layer, etching pyramidal apertures in the first layer of doped silicon, removing the masking layer, depositing a second layer of doped silicon onto the first layer of doped silicon, the second layer of doped silicon being oppositely doped to the first layer of doped silicon and etching away the first layer of doped silicon. Further steps may be added to form the atomic force microscope tips at the end of cantilevers.