The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 17, 2007

Filed:

Dec. 28, 2005
Applicants:

Yosi Pinto, Yokneam, IL;

Geoffrey S. Gongwer, Los Altos, CA (US);

Oren Honen, Yokneam, IL;

Inventors:

Yosi Pinto, Yokneam, IL;

Geoffrey S. Gongwer, Los Altos, CA (US);

Oren Honen, Yokneam, IL;

Assignee:

SanDisk Corporation, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory system that incorporates methods of amplifying the lifetime of a counter made up of memory elements, such as EEPROM cells, having finite endurance. A relatively small memory made up of a number of individually accessible write segments, where, depending on the embodiment, each write segment is made up of a single memory cell or a small number of cells (e.g., a byte). A count is encoded so that it is distributed across a number of fields, each associated with one of the write segments, such that as the count is incremented only a single field (or, in the single bit embodiments, occasionally more than one field) is changed and that these changes are evenly distributed across the fields. The changed field is then written to the corresponding segment, while the other write segments are unchanged. Consequently, the number of rewrites to a given write segment is decreased, and the lifetime correspondingly increased, by a factor corresponding to the number of write segments used.


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