The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2007
Filed:
Dec. 09, 2002
Shigenori Katayama, Nagano-ken, JP;
Shigenori Katayama, Nagano-ken, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
To provide an electrooptic device which can reliably suppress a substrate floating effect, such as a parasitic bipolar phenomenon, in an SOI-MIS transistor, and which has superior electrical characteristics. An electrooptic device (liquid crystal light valve) of the present invention uses, as one substrate, a composite substrate including a quartz substrate (main substrateA) having a first coefficient of thermal expansion, an insulating layer (insulating underlayer) formed on the quartz substrate, and a single-crystal silicon layer (semiconductor layer) formed on the insulating layer and having a second coefficient of thermal expansion. A TFTthat uses the single-crystal silicon layer as a channel regionis formed on the insulating layer, and at least one line defect D exists in the single-crystal silicon layer that forms the channel region