The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 17, 2007

Filed:

Dec. 10, 2002
Applicants:

Yukinobu Sugiyama, Hamamatsu, JP;

Haruyoshi Toyoda, Hamamatsu, JP;

Naohisa Mukozaka, Hamamatsu, JP;

Inventors:

Yukinobu Sugiyama, Hamamatsu, JP;

Haruyoshi Toyoda, Hamamatsu, JP;

Naohisa Mukozaka, Hamamatsu, JP;

Assignee:

Hamamatsu Photonics K.K., Shizuoka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/228 (2006.01); H04N 3/14 (2006.01); H04N 5/335 (2006.01); H04N 5/225 (2006.01); H01L 27/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A photosensitive region includes a semiconductor substratemade of a P-type semiconductor, and N-type semiconductor regionsandformed on the surface of the semiconductor substrateAccordingly, the first photosensitive portion includes a portion of the semiconductor substrateand the semiconductor regions, thus configuring a photodiode. The photosensitive region on one side contained in the second photosensitive region includes a portion of the semiconductor substrateand the semiconductor regionsthus configuring a photodiode. The photosensitive region on the other side contained in the second photosensitive region includes a portion of the semiconductor substrateand the semiconductor regions, thus configuring a photodiode. Each of the semiconductor regionsandis in a shape of an approximate triangle, and is formed so that one side of the regionsis adjacent to one side of the regionand vice versa, in one pixel.


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