The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2007
Filed:
Jun. 17, 2004
Minoru Kubo, Mie, JP;
Yo Ichikawa, Aichi, JP;
Akira Asai, Osaka, JP;
Takahiro Kawashima, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
In a field effect transistor, an Si layer, an SiC (SiC) channel layer, a CN gate insulating filmmade of a carbon nitride layer (CN) and a gate electrodeare deposited in this order on an Si substrate. The thickness of the SiC channel layeris set to a value that is less than or equal to the critical thickness so that a dislocation due to a strain does not occur according to the carbon content. A source regionand a drain regionare formed on opposite sides of the SiC channel layer, and a source electrodeand a drain electrodeare provided on the source regionand the drain region, respectively.