The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2007
Filed:
Feb. 24, 2005
Naoki Nakajo, Aichi-ken, JP;
Masao Kamiya, Aichi-ken, JP;
Tetsuya Taki, Aichi-ken, JP;
Toyoda Gosei Co., Ltd., Nishikasugai-gun, JP;
Abstract
In a Group III nitride compound semiconductor light-emitting device which outputs lights from a semiconductor plane, about 1.5 μm in height of a Group III nitride compound semiconductor projection part, which is made of Mg-doped p-type GaN having Mg doping concentration of 8×10/cmand is formed through selective growth, is formed on a p-type contact layer (second p-layer). And a light-transparency electrodeis formed thereon through metal deposition. The Group III nitride compound semiconductor projection partmakes a rugged surface for outputting lights and actual critical angle is widened, which enables to improve luminous outputting efficiency. And because etching is not employed to form the ruggedness, driving voltage does not increase.