The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7244672 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 17, 2007

Filed:

Mar. 09, 2005
Applicants:

Huong Thanh Nguyen, San Ramon, CA (US);

Michael Scott Barnes, San Ramon, CA (US);

Li-qun Xia, San Jose, CA (US);

Mehul Naik, San Jose, CA (US);

Inventors:

Huong Thanh Nguyen, San Ramon, CA (US);

Michael Scott Barnes, San Ramon, CA (US);

Li-Qun Xia, San Jose, CA (US);

Mehul Naik, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of selectively etching organosilicate layers in integrated circuit fabrication processes is disclosed. The organosilicate layers are selectively etched using a hydrogen-containing fluorocarbon gas. The hydrogen-containing fluorocarbon gas may be used to selectively etch an organosilicate layer formed on a silicon oxide stop etch layer when fabricating a damascene structure.


Find Patent Forward Citations

Nguyen, Huong. (2007). Selective etching of organosilicate films over silicon oxide stop etch layers (U.S. Patent No. 7244672). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7244672

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