The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2007
Filed:
Jan. 31, 2005
Applicant:
You-seung Jin, Seoul, KR;
Inventor:
You-Seung Jin, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
For fabricating a multi-gate transistor, at least one active pattern having uniform critical dimension is formed. Epitaxy structures are grown from exposed portions of the active pattern. A channel region of the transistor is formed from at least two surfaces of the active pattern. Source and drain are formed using the epitaxy structures.