The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2007
Filed:
Aug. 11, 2004
Kazuhide Kumakura, Zama, JP;
Masanobu Hiroki, Sagamihara, JP;
Toshiki Makimoto, Kawasaki, JP;
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Abstract
A substrate for growth of nitride semiconductor capable of obtaining a high-quality nitride semiconductor crystal layer is provided. A substrate for growth of nitride semiconductor for growth of a nitride semiconductor layer on a sapphire substrate () according to one embodiment of the invention is provided with an AlOlayer () as separately provided on the sapphire substrate (), an AlON layer () which is the first layer, and an AlN layer () which is the second layer. With respect to the first layer and the second layer, the AlON layer () and the AlN layer () are deposited on the AlOlayer () in this order.