The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2007
Filed:
Mar. 24, 2006
Applicants:
Yifeng Zhou, San Jose, CA (US);
Gerardo A. Delgadino, Santa Clara, CA (US);
Chang-lin (Peter) Hsieh, San Jose, CA (US);
Inventors:
Yifeng Zhou, San Jose, CA (US);
Gerardo A. Delgadino, Santa Clara, CA (US);
Chang-Lin (Peter) Hsieh, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B08B 3/12 (2006.01); B08B 6/00 (2006.01); B08B 7/00 (2006.01); B08B 7/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
A plasma etch process includes a plasma etch step performed with a photoresist mask on a workpiece using a polymerizing etch process gas that produces in the plasma polymerizing species which accumulate as a protective polymer layer on the surface of said photoresist mask during the etch step, the process including the following steps performed in the same chamber after the etch step and prior to removing the photoresist mask: