The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2007
Filed:
May. 19, 2003
Christofer Toumazou, Oxford, GB;
Julius Georgiou, Nicosia, CY;
Christofer Toumazou, Oxford, GB;
Julius Georgiou, Nicosia, CY;
DNA Electronics Limited, London, GB;
Abstract
A reference circuit comprising first and second field effect transistors connected to form a first current mirror, and third and fourth field effect transistors connected to form a second current mirror, wherein a property of the first transistor is mismatched relative to the second transistor such that the threshold voltage of the first transistor is significantly higher than the threshold voltage of the second transistor, and the drain current versus gate-source voltage responses of the first and second transistors have substantially different gradients for current levels at which the reference circuit is operated.