The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2007
Filed:
Feb. 14, 2005
Applicant:
Masayuki Jyumonji, Yokohama, JP;
Inventor:
Masayuki Jyumonji, Yokohama, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract
A treatment method of annealing and doping a semiconductor including irradiating a semiconductor layer () formed on a substrate () with a laser beam (a), thereby melting at least a part of the semiconductor layer; irradiating a target material () including atoms with which the semiconductor layer is to be doped with the laser beam (a'), thereby ablating the atoms of the target material; and doping the melted semiconductor layer with the ablated atoms.