The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2007
Filed:
Mar. 28, 2005
Yong Liang, Gilbert, AZ (US);
Clarence J. Tracy, Tempe, AZ (US);
Yong Liang, Gilbert, AZ (US);
Clarence J. Tracy, Tempe, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
Methods for fabricating high work function p-MOS device metal electrodes are provided. In one embodiment, a method is provided for producing a metal electrode including the steps of: providing a high k dielectric stack with an exposed surface; contacting the exposed surface of the high k dielectric stack with a vapor of a metal oxide wherein the metal oxide is selected from the group consisting of RuO, IrO, ReO, MoO, WO, VO, and PdO; and contacting the exposed surface of the dielectric stack with a vapor of an additive selected from the group consisting of SiO, AlO, HfO, ZrO, MgO, SrO, BaO, YO, LaO, and TiO, whereby contacting the exposed surface of the dielectric stack with the vapor of the metal oxide and the vapor of the additive forms an electrode and wherein the additive is present at an amount between about 1% to about 50% by atomic weight percent in the electrode.