The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2007
Filed:
Apr. 19, 2005
Gregory Eric Howard, Dallas, TX (US);
Leland Swanson, McKinney, TX (US);
Gregory Eric Howard, Dallas, TX (US);
Leland Swanson, McKinney, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention facilitates semiconductor fabrication of semiconductor devices having polysilicon resistors. An oxide layer is formed over a semiconductor device (). A polysilicon layer is formed on the oxide layer (). The polysilicon layer is patterned to form a polysilicon resistor (). A poly resistor mask having a selected percentage of the poly resistor exposed is formed on the poly resistor (). A selected dopant is implanted (), which modifies the resistivity of the poly resistor. The mask is removed () and a thermal activation process is performed () that diffuses the implanted dopant to a substantially uniform concentration throughout the polysilicon resistor.