The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2007
Filed:
May. 06, 2005
Hyun Jung Park, Seoul, KR;
Bon Won Koo, Gyeonggi-do, KR;
Joo Young Kim, Gyeonggi-do, KR;
Jung Han Shin, Gyeonggi-do, KR;
Eun Jeong Jeong, Gyeonggi-do, KR;
Sang Yoon Lee, Seoul, KR;
Hyun Jung Park, Seoul, KR;
Bon Won Koo, Gyeonggi-do, KR;
Joo Young Kim, Gyeonggi-do, KR;
Jung Han Shin, Gyeonggi-do, KR;
Eun Jeong Jeong, Gyeonggi-do, KR;
Sang Yoon Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
Disclosed herein is a method for fabricating an organic thin film transistor that includes a gate electrode, a gate insulating film, source/drain electrodes and an organic semiconductor layer formed in this order on a substrate wherein the surface of the gate insulating film on which source/drain electrodes are formed is impregnated with an inorganic or organic acid, followed by annealing. According to the method, the surface of a gate insulating film damaged by a photoresist process can be effectively recovered. In addition, organic thin film transistors having high charge carrier mobility and high on/off current ratio can be fabricated.