The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2007
Filed:
Mar. 30, 2005
Hajime Yamada, Otsu, JP;
Masaki Takeuchi, Otsu, JP;
Hideki Kawamura, Shiga-ken, JP;
Hiroyuki Fujino, Omihachiman, JP;
Yukio Yoshino, Otsu, JP;
Ken-ichi Uesaka, Shiga-ken, JP;
Tadashi Nomura, Kyoto, JP;
Daisuke Nakamura, Shiga-ken, JP;
Yoshimitsu Ushimi, Omihachiman, JP;
Takashi Hayashi, Shiga-ken, JP;
Hajime Yamada, Otsu, JP;
Masaki Takeuchi, Otsu, JP;
Hideki Kawamura, Shiga-ken, JP;
Hiroyuki Fujino, Omihachiman, JP;
Yukio Yoshino, Otsu, JP;
Ken-ichi Uesaka, Shiga-ken, JP;
Tadashi Nomura, Kyoto, JP;
Daisuke Nakamura, Shiga-ken, JP;
Yoshimitsu Ushimi, Omihachiman, JP;
Takashi Hayashi, Shiga-ken, JP;
Murata Manufacturing Co., Ltd., Kyoto, JP;
Abstract
A piezoelectric thin film resonator having a stabilized temperature characteristic of resonant frequency, a method for manufacturing the same, and a communication apparatus using the piezoelectric thin film resonator are provided. The piezoelectric thin film resonator is provided with a substrate having an opening, first and second insulation films which are provided on one surface of the substrate while covering the opening and which primarily include SiOand AlO, respectively, AlOhaving oxygen defect and being in an amorphous state, and a piezoelectric thin film which is provided on the second insulation film and is sandwiched between electrodes and which primarily includes ZnO.