The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2007
Filed:
Oct. 29, 2004
Matthias Strassburg, Dresden, DE;
Stephan Riedel, Dresden, DE;
Matthias Strassburg, Dresden, DE;
Stephan Riedel, Dresden, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A semiconductor device comprises a memory cell () including a transistor body () having a top surface () and including a first doping area () and a second doping area () with a channel region () in between. The memory cell () further includes a gate electrode () arranged above the channel region () and separated therefrom by a dielectric layer (). An oxide-nitride-oxide layer () has first portions () and second portions (). The first portions () of the oxide-nitride-oxide layer () are arranged above at least parts of the first and second doping areas () and are substantially parallel to the top surface () of the transistor body (). The second portions () of the oxide-nitride-oxide layer () are adjacent to the gate electrode () and extend in a direction not substantially parallel to the top surface () of the transistor body ().