The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2007
Filed:
May. 16, 2005
Ming-lum Lee, Tainan County, TW;
Wei-chih Lai, Tainan County, TW;
Shih-chang Shei, Tainan County, TW;
Ming-Lum Lee, Tainan County, TW;
Wei-Chih Lai, Tainan County, TW;
Shih-Chang Shei, Tainan County, TW;
Epitech Technology Corporation, Tainan County, TW;
Abstract
A photodetector is described. The photodetector is comprised of a substrate, a first n-type III-V compound semiconductor layer located on the substrate, an n-type III-V compound semiconductor layer located on a first portion of the first n-type III-V compound semiconductor layer with a second portion of the first n-type III-V compound semiconductor layer exposed, a p-type III-V compound semiconductor layer located on the n-type compound semiconductor layer, an undoped III-V compound semiconductor layer located on the p-type III-V compound semiconductor layer, a second n-type III-V compound semiconductor layer located on the undoped III-V compound semiconductor layer, a conductive transparent oxide layer located on the second n-type III-V compound semiconductor layer, a first electrode located on a portion of the conductive transparent oxide layer, and a second electrode located on a portion of the second portion of the first n-type III-V compound semiconductor layer.