The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2007
Filed:
Apr. 27, 2004
Shih Chang Chang, Hsinchu, TW;
De-hua Deng, Ba-De, TW;
Chun-hsiang Fang, Yilan Hsien, TW;
Yaw-ming Tsai, Taichung Hsien, TW;
Chang-ho Tseng, Sinwu Township, Taoyuan County, TW;
Shih Chang Chang, Hsinchu, TW;
De-Hua Deng, Ba-De, TW;
Chun-Hsiang Fang, Yilan Hsien, TW;
Yaw-Ming Tsai, Taichung Hsien, TW;
Chang-Ho Tseng, Sinwu Township, Taoyuan County, TW;
TPO Displays Corp., Chu-Nan, TW;
Abstract
A self-aligned LDD TFT and a fabrication method thereof. A substrate is provided, on which a semiconductor layer is formed. A first masking layer is provided over a first region of the portion of the semiconductor layer. The first masking layer includes a material that provides a permeable barrier to a dopant. The semiconductor layer including the first region covered by the first masking layer is exposed to the dopant, wherein the first region covered by the first masking layer is lightly doped with the dopant in comparison to a second region not covered by the first masking region.