The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 03, 2007

Filed:

Nov. 08, 2005
Applicant:

IN Kwon Jeong, Cupertino, CA (US);

Inventor:

In Kwon Jeong, Cupertino, CA (US);

Assignee:

Inopla Inc., San Jose, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods for fabricating one or more metal (e.g., copper) damascene structures in a semiconductor wafer use at least three polishing steps to reduce erosion topography in the resulting metal damascene structures and/or increase throughput. The polishing steps may be performed at four polishing units of a polishing apparatus, which may include one or more pivotable load/unload cups to transfer the semiconductor wafer between some of the polishing units.


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