The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 03, 2007

Filed:

Jun. 28, 2005
Applicants:

Takeshi Hoshi, Yokohama, JP;

Masahiro Kiyotoshi, Sagamihara, JP;

Inventors:

Takeshi Hoshi, Yokohama, JP;

Masahiro Kiyotoshi, Sagamihara, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to the present invention, there is provided a semiconductor device fabrication method that coats a semiconductor substrate with a silazane perhydride polymer solution prepared by dispersing a silazane perhydride polymer in a solvent containing carbon, thereby forming a coating film. A polysilazane film is formed by volatilizing the solvent by heat-treating the coating film. The semiconductor substrate is inserted into a predetermined furnace, where the pressure in the furnace is lowered. The polysilazane film is oxidized while the pressure in the furnace is raised by supplying steam into the furnace, thereby forming a silicon oxide film.


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