The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2007
Filed:
Feb. 24, 2005
Hirokazu Tokuno, Cupertino, CA (US);
Wenmei LI, Sunnyvale, CA (US);
Ning Cheng, San Jose, CA (US);
Minh Van Ngo, Fremont, CA (US);
Angela T. Hui, Fremont, CA (US);
Cinti X. Chen, Fremont, CA (US);
Hirokazu Tokuno, Cupertino, CA (US);
Wenmei Li, Sunnyvale, CA (US);
Ning Cheng, San Jose, CA (US);
Minh Van Ngo, Fremont, CA (US);
Angela T. Hui, Fremont, CA (US);
Cinti X. Chen, Fremont, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
A memory device may include a number of memory cells, a first interlayer dielectric formed over the memory cells and at least one metal layer formed over the interlayer dielectric. A dielectric layer may be formed over the metal layer. The dielectric layer may represent a cap layer formed at or near an upper surface of the memory device and may be deposited at a relatively low temperature.