The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2007
Filed:
Feb. 07, 2005
Se-young Cho, Seoul, KR;
Se-young Cho, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
Provided is a method of forming a single crystal silicon thin film using an SLS method and a patterned grain boundary filtering region. The method of forming a single crystal silicon thin film by crystallizing an amorphous silicon layer deposited on a substrate, includes patterning the amorphous silicon layer to have a second region having a narrower width than the first and third regions to prevent grain boundaries from reaching the third region, wherein the second region connects a first region where the crystallization commences and the third region where a single crystal without beam boundaries can grow, partially forming a mask layer on the first region, and crystallizing the amorphous silicon layer by irradiating a laser beam from the first region to the third region in steps using a linear beam SLS method.