The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 03, 2007

Filed:

May. 23, 2005
Applicants:

Vladislav Vashchenko, Palo Alto, CA (US);

Andy Strachan, Santa Clara, CA (US);

Peter J. Hopper, San Jose, CA (US);

Philipp Lindorfer, San Jose, CA (US);

Inventors:

Vladislav Vashchenko, Palo Alto, CA (US);

Andy Strachan, Santa Clara, CA (US);

Peter J. Hopper, San Jose, CA (US);

Philipp Lindorfer, San Jose, CA (US);

Assignee:

National Semiconductor Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/332 (2006.01);
U.S. Cl.
CPC ...
Abstract

When a high-voltage, such as from an ESD pulse, is placed across a silicon controlled rectifier, which includes an NPN transistor and a PNP transistor that is connected to the NPN transistor, the likelihood of punch through occurring between two regions of the rectifier is substantially reduced by forming the emitter of one transistor adjacent to the tails of the sinker down region of the other transistor.


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