The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2007
Filed:
Apr. 02, 2003
Masashi Yoshimi, Kobe, JP;
Takashi Suezaki, Otsu, JP;
Kenji Yamamoto, Kobe, JP;
Kaneka Corporation, Osaka, JP;
Abstract
A method of manufacturing a tandem-type thin film photoelectric conversion device includes the steps of forming at least one photoelectric conversion unit () on a substrate () in a deposition apparatus, taking out the substrate () having the photoelectric conversion unit () from the deposition apparatus to the air, introducing the substrate () into a deposition apparatus and carrying out plasma exposure processing on the substrate () in an atmosphere of a gas mixture containing an impurity for determining the conductivity type of the same conductivity type as that of the uppermost conductivity type layer () and hydrogen, forming a conductivity type intermediate layer () by additionally supplying semiconductor raw gas to the deposition apparatus, and then forming a subsequent photoelectric conversion unit ().