The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2007
Filed:
Oct. 27, 2005
Neal R. Fedora, Clearwater, FL (US);
Neal R. Fedora, Clearwater, FL (US);
Honeywell International Inc., Morristown, NJ (US);
Abstract
MEMS Sensor Systems and Methods are provided. In one embodiment, a method for producing a six degree of freedom inertial sensor is provided. The method comprises fabricating a first silicon wafer segment having at least one inertial sensor pair, the at least one inertial sensor pair comprising one or both of a pair of orthogonally oriented accelerometers and a pair of orthogonally oriented gyroscopes; fabricating a second silicon wafer segment having at least one inertial sensor, the at least one inertial sensor comprising one or both of an accelerometer and a gyroscope; assembling together the first silicon wafer segment and the second silicon wafer segment such that the at least one inertial sensor pair and the at least one inertial sensor are oriented orthogonal to each other; and bonding the first silicon wafer segment to the second silicon wafer segment.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile