The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 26, 2007

Filed:

Nov. 23, 2005
Applicants:

Ja-won Seo, Suwon-si, KR;

Joong-hee Lee, Seongnam-si, KR;

Joo-chul Cho, Suwon-si, KR;

Inventors:

Ja-Won Seo, Suwon-si, KR;

Joong-Hee Lee, Seongnam-si, KR;

Joo-Chul Cho, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/10 (2006.01); H01S 3/00 (2006.01); H01S 3/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method and apparatus for compensating for temperature characteristics of a laser diode are disclosed. The laser diode may be used in a transmitter unit of a transceiver for optical signal transmission. The transceiver includes the laser diode and a monitor photodiode. In such a method, a modulation current is derived from an input voltage and arbitrary variables. Variations of overall modulation resistance values corresponding to an operation temperature range are evaluated by a relation between the modulation current and the overall modulation resistance, and the overall modulation resistance values are determined according to the variations. Also, variations of overall bias resistance values corresponding to the temperature range are evaluated by a current Impd of the photodiode, which is derived at specific optical power arbitrarily chosen in the temperature range. The overall bias resistance values are determined according to the variations.


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