The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2007
Filed:
Sep. 16, 2004
Ying-wen Huang, Hsinchu, TW;
Chi-kuen Lo, Hsinchu, TW;
Lan-chin Hsieh, Hsinchu, TW;
Yeong-der Yao, Hsinchu, TW;
Der-ray Huang, Hsinchu, TW;
Jau-jiu Ju, Hsinchu, TW;
Ying-Wen Huang, Hsinchu, TW;
Chi-Kuen Lo, Hsinchu, TW;
Lan-Chin Hsieh, Hsinchu, TW;
Yeong-Der Yao, Hsinchu, TW;
Der-Ray Huang, Hsinchu, TW;
Jau-Jiu Ju, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A spin transistor uses a single potential barrier structure to increase a current fluctuation rate. The spin transistor may include at least one of an emitter, a collector, a base and a base resistor. The emitter may be a magneto-resistant device, which may provide an adjustable resistance based on a magnetic field. The collector may be a passive device which may provide the single potential barrier. The base may placed between the emitter and the collector, and may couple the emitter with the collector. The base resistor may be connected to the base in order to provide a bias.