The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2007
Filed:
Oct. 28, 2005
Haruyuki Sorada, Hirakata, JP;
Takeshi Takagi, Kyoto, JP;
Akira Asai, Osaka, JP;
Akira Inoue, Kadoma, JP;
Haruyuki Sorada, Hirakata, JP;
Takeshi Takagi, Kyoto, JP;
Akira Asai, Osaka, JP;
Akira Inoue, Kadoma, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
The present invention provides a semiconductor device comprising: a semiconductor layer (); a gate electrode () formed on the semiconductor layer () via a gate insulation film (); and a first insulation film () formed at one or more of sidewalls of the semiconductor layer (), the gate insulation film () and the gate electrode (); wherein the first insulation film () overlies a part of the gate insulation film () surface. According to the semiconductor device, leakage current at the isolation edge can be suppressed and thus reliability can be improved.