The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 26, 2007

Filed:

May. 31, 2000
Applicants:

Rama R. Goruganthu, Austin, TX (US);

Michael R. Bruce, Austin, TX (US);

Inventors:

Rama R. Goruganthu, Austin, TX (US);

Michael R. Bruce, Austin, TX (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/305 (2006.01); G01R 31/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

Analysis of a semiconductor die having silicon-on-insulator (SOI) structure is enhanced by accessing the circuitry within the die from the back side without necessarily breaching or needing to breach the thin insulator layer of the SOI structure. According to an example embodiment of the present invention, a portion of substrate is removed from the back side of a semiconductor die having a SOI structure and a backside opposite circuitry in a circuit side. An exposed region is formed where the substrate has been removed. A detectable response from the exposed region is induced, for example, by an electron beam, as a function of a portion of the active circuitry within the die.


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