The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2007
Filed:
Jun. 18, 2003
Shoko Suyama, Kawasaki, JP;
Tsuneji Kameda, Tokyo, JP;
Yoshiyasu Itoh, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
Silicon carbide matrix composite material () comprises silicon carbide matrix () as a host. The silicon carbide matrix () comprises first silicon carbide phase () of 0.1 to 10 μm average crystal grain diameter and second silicon carbide phase () of 0.01 to 2 μm average crystal grain diameter. In interstices of silicon carbide crystal grains constituting the silicon carbide matrix (), liberated silicon phase () amounting to, for example, 5 to 50 mass % based on the composite material () is present continuously in network form. This fine structure enables realizing high strength and high toughness of the silicon carbide composite material ().