The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2007
Filed:
Mar. 23, 2004
Applicant:
Naoto Horiguchi, Kawasaki, JP;
Inventor:
Naoto Horiguchi, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device is provided, which aims to reduce the standby power thereof by reducing the leak between a body and a drain with restraining the effect on a threshold voltage, in order to actualize the highly reliable semiconductor device. When extension regions are formed, an n-type impurity less diffusive than phosphorus (P), for example, arsenic (As) is used as an impurity. In addition to ordinary ion implantation with high dose (high concentration) and low acceleration energy, Asions are implanted with low dose and high acceleration energy.