The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2007
Filed:
Dec. 13, 2004
Applicant:
Young Ho Yang, Cheonju-Shi, KR;
Inventor:
Young Ho Yang, Cheonju-Shi, KR;
Assignee:
Hynix Semiconductor Inc., Kyungki-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
Disclosed herein is a method of forming an element isolation film of a semiconductor device. An aluminum oxide film of a high wet etch rate is used as a pad oxide film, a trench is formed, and top and bottom edges of the trench is made rounded while removing some of the aluminum oxide film by a cleaning process. It is thus possible to make the top and bottom edges of the trench rounded without using polymer. It is also possible to minimize generation of a moat due to a step between a field region and an active region in a cleaning process before a gate oxide film is formed.