Drain extended mos devices with self-aligned floating region and fabrication methods therefor

Abstract

Semiconductor devices and manufacturing methods therefor are disclosed, in which a drain-extended MOS transistor comprises a self-aligned floating region proximate one end of the transistor gate and doped with a first type dopant to reduce channel hot carrier degradation, as well as an oppositely doped first source/drain laterally spaced from the first end of the gate structure in a semiconductor body. The device may further comprise a resurf region doped to a lower concentration than the floating region to facilitate improved breakdown voltage performance. A method of fabricating a drain-extended MOS transistor in a semiconductor device is disclosed, comprising providing first dopants to a floating region in a semiconductor body, which is self-aligned with the first end of a gate structure, and providing second dopants to source/drains of the semiconductor body, wherein the first and second dopants are different.