The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2007
Filed:
Jun. 09, 2005
Jae-kyu Ha, Gyeonggi-do, KR;
Jong-chul Park, Gyeonggi-do, KR;
Jae-Kyu Ha, Gyeonggi-do, KR;
Jong-Chul Park, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd, , KR;
Abstract
Methods are provided for forming a device, such as a semiconductor device. A field region and an active region of a substrate are defined in which the field region has an upper surface that extends further away from the substrate and is higher than an upper surface of the active region. A hard mask layer is formed with a substantially planar upper surface on the field region and the active region. The hard mask layer is partially etched to form a hard mask pattern that exposes at least a portion of the active region. The substrate is partially etched in the active region using the hard mask pattern as an etching mask to form a gate trench. A recessed gate electrode if formed on the substrate in the gate trench.