The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 2007

Filed:

Oct. 23, 2002
Applicants:

Eiji Takahashi, Osaka, JP;

Yoshiyuki Saito, Katano, JP;

Yukihiro Fukumoto, Hirakata, JP;

Hiroshi Benno, Kanano, JP;

Inventors:

Eiji Takahashi, Osaka, JP;

Yoshiyuki Saito, Katano, JP;

Yukihiro Fukumoto, Hirakata, JP;

Hiroshi Benno, Kanano, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of evaluating noise immunity of a semiconductor device is provided. An actual circuit including the semiconductor device is represented by an equivalent circuit which has a target equivalent circuit, a noise source equivalent circuit, and an external equivalent circuit connected in parallel. The target equivalent circuit represents the semiconductor device. The noise source equivalent circuit represents a noise source outside the semiconductor device, and supplies noise to the target equivalent circuit. The external equivalent circuit represents a circuit outside the semiconductor device. The noise immunity is evaluated based on a voltage or current which arises in the target equivalent circuit by the noise. In this way, the immunity of the semiconductor device against extraneous noise can be evaluated in consideration of the effects of the circuitry outside the semiconductor device.


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