The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2007
Filed:
Jul. 25, 2005
Johnny Chan, Fremont, CA (US);
Jeffrey Ming-hung Tsai, San Jose, CA (US);
Tin-wai Wong, Fremont, CA (US);
Johnny Chan, Fremont, CA (US);
Jeffrey Ming-Hung Tsai, San Jose, CA (US);
Tin-Wai Wong, Fremont, CA (US);
Atmel Corporation, San Jose, CA (US);
Abstract
A flash memory programming process incorporates two charge pumps per byte of bit cells. Placing a data 'one' value in each bit cell erases an entire memory device. Before programming each cell, a prospective data content is scrutinized. If a data 'zero' is to be applied to the bit cell, a charge pump engages to bias the cell and activate a hot electron injection process to affect the programming. If a data “one” is to be applied to the bit cell, no programming activity is undertaken and the process increments to the next bit cell in the data structure. Therefore, total programming time is reduced proportionally to the number of data “one” bits to be programmed. Where more than one charge pump is engaged in parallel to a data structure, total programming time is further reduced when two data “one” values are to be programmed in parallel.