The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2007
Filed:
Aug. 09, 2005
Giacomo Curatolo, Dresden, DE;
Carlo Borromeo, Dresden, DE;
Giacomo Curatolo, Dresden, DE;
Carlo Borromeo, Dresden, DE;
Infineon Technologies Flash GmbH & Co. KG, Dresden, DE;
Abstract
A method for reading a memory cell, wherein the memory cell comprises two source/drain regions and a gate, wherein the source/drain regions are each connected to a respective local bitline, and, wherein one of the source/drain regions of a neighboring memory cell is connected to one of the local bitlines, the other source/drain region of the neighboring memory cell being connected to another local bitline, comprising the steps of connecting the local bitline that connects the source/drain region of the memory cell and the source/drain region of the neighboring memory cell to a first global bitline, connecting the local bitline that connects the other source/drain region of the memory cell to a second global bitline, connecting the local bitline that connects the other source/drain region of the neighboring memory cell to one of a plurality of local power rails, applying a gate potential to the gate of the memory cell, applying a potential to the first global bitline and applying another potential to the second global bitline, and measuring the current flowing through the first global bitline.