The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2007
Filed:
Apr. 13, 2006
Applicant:
Shiao-shien Chen, Hsin-Chu, TW;
Inventor:
Shiao-Shien Chen, Hsin-Chu, TW;
Assignee:
Novatek Microelectronics Corp., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 3/22 (2006.01);
U.S. Cl.
CPC ...
Abstract
MOS Transistors and bipolar junction transistors are connected to input pads and output pads for implementing electrostatic discharge protection. By conducting a power clamp circuit and applying a substrate-trigger technology, electrostatic discharge protection is further enhanced. For instance, positive ESD stress protection can be enhanced between signal pads (input pads and output pads) and VSS by using NMOS transistors and field oxide devices. Negative ESD stress protection can be enhanced between signal pads and VDD by using PMOS transistors.