The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2007
Filed:
Jul. 28, 2004
Applicants:
Young Ho Kim, Daejeon, KR;
Cheon Soo Kim, Daejeon, KR;
Mun Yang Park, Daejeon, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/45 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is a method of acquiring a high linear characteristic and a low distortion in a transconductor (operational transconductance amplifier), especially, in a triode region type transconductor among CMOS transconductors. A resistance is inserted in a source or a drain of an input triode transistor. The transconductor has a simple circuit structure, and has a large linear region, constant transconductance and low total harmonic distortion (THD) characteristic within an error region.