The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2007
Filed:
Nov. 29, 2005
Dong Ho Anh, Seoul, KR;
Tae-yon Lee, Seoul, KR;
Ki Bum Kim, Seoul, KR;
Byung-ki Cheong, Seoul, KR;
Dae-hwan Kang, Seoul, KR;
Jeung-hyun Jeong, Seoul, KR;
IN Ho Kim, Seoul, KR;
Taek Sung Lee, Seoul, KR;
Won Mok Kim, Seoul, KR;
Dong Ho Anh, Seoul, KR;
Tae-Yon Lee, Seoul, KR;
Ki Bum Kim, Seoul, KR;
Byung-ki Cheong, Seoul, KR;
Dae-Hwan Kang, Seoul, KR;
Jeung-hyun Jeong, Seoul, KR;
In Ho Kim, Seoul, KR;
Taek Sung Lee, Seoul, KR;
Won Mok Kim, Seoul, KR;
Abstract
The present invention provides a phase change memory cell comprising (GeSbTe)(RSTe)solid solution, the solid solution being formed from a Ge—Sb—Te based alloy and a ternary metal alloy R—S—Te sharing same crystal structure as the Ge—Sb—Te based alloy. A nonvolatile phase change memory cell in accordance with the present invention provides many advantages such as high speed, high data retention, and multi-bit operation.