The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2007
Filed:
Jan. 27, 2006
Snezana Bogdanovich, Newark, DE (US);
Lawrence Cheung, Wilmington, DE (US);
Zhenxue Jing, West Chester, PA (US);
Samir Parikh, Newark, DE (US);
Snezana Bogdanovich, Newark, DE (US);
Lawrence Cheung, Wilmington, DE (US);
Zhenxue Jing, West Chester, PA (US);
Samir Parikh, Newark, DE (US);
Hologic, Inc., Bedford, MA (US);
Abstract
A flat panel x-ray imager exhibiting reduced ghosting effects and overvoltage protection by appropriate leakage current characteristics of the thin-film transistor array. A top electrode of a suitable material is directly on a non-insulating organic layer. The organic layer is directly on an amorphous selenium-based charge generator layer allowing charge transport across the layer, thereby reducing ghosting. The thin-film transistors have leakage current that rises relatively slowly with voltage across the transistor within a range that matches exposure through an object being imaged but rises at a sufficiently higher rate within a higher range to provide protection even when a corresponding region of the charge generator layer receives greater amounts of x-rays.