The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 2007

Filed:

Jan. 20, 2004
Applicants:

Shinichi Ishitobi, Ube, JP;

Koichi Fukuda, Ube, JP;

Takafumi Kawano, Ube, JP;

Hisayoshi Iba, Ube, JP;

Inventors:

Shinichi Ishitobi, Ube, JP;

Koichi Fukuda, Ube, JP;

Takafumi Kawano, Ube, JP;

Hisayoshi Iba, Ube, JP;

Assignee:

UBE Industries, Ltd., Yamaguchi, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C04B 35/465 (2006.01); B32B 18/00 (2006.01); B32B 17/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A dielectric ceramic composition which can be sintered at such a temperature of about 800 to 1000° C. as to permit incorporation of and multilayer formation with a low resistant conductor such as Ag or Cu by the simultaneous sintering with the low resistant conductor, which is sintered to form dielectric ceramics having a dielectric constant εof not more than 10, and a resonator having a large Q×fvalue and an absolute value in temperature coefficient τof resonance frequency fof not more than 20 ppm/° C., the value being easy to be controlled. The dielectric ceramic composition contains a glass component in an amount of 5 to 150 parts by weight based on 100 parts by weight of a main component represented by general formula: aZnAlO-bZnSiO-cTiO-dZnTiO, in which the molar fractions of respective components a, b, c, and d satisfy 5.0≦a≦80.0 mol % 5.0≦b≦70.0 mol %, 5.0≦c≦27.5 mol %, 0≦d≦30.0 mol % (a+b+c+d=100 mol %) The main component may also be represented by aMgSiO-bZnAlO-cSiO-dCaTiO-eZnSiO.


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