The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2007
Filed:
Jan. 12, 2007
Patricia B. Smith, Colleyville, TX (US);
Mona M. Eissa, Plano, TX (US);
Patricia B. Smith, Colleyville, TX (US);
Mona M. Eissa, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method () of fabricating an electronic device () formed on a semiconductor wafer. The method forms a layer () of a first material in a fixed position relative to the wafer. The first material has a dielectric constant less than 3.6. The method also forms a photoresist layer in () a fixed position relative to the layer of the first material. The method also forms at least one void () through the layer of the first material in response to the photoresist layer. Further, the method subjects () the semiconductor wafer to a plasma which incorporates a gas which includes hydrogen so as to remove the photoresist layer.