The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2007
Filed:
Mar. 08, 2004
Applicants:
Kousuke Suzuki, Kawasaki, JP;
Katsuyuki Karakawa, Kasugai, JP;
Inventors:
Kousuke Suzuki, Kawasaki, JP;
Katsuyuki Karakawa, Kasugai, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device having a self-aligned contact hole is formed by providing a side wall oxide film on a gate electrode, covering the gate electrode and the side wall oxide film by an oxide film and further covering the oxide film by a nitride film, wherein the oxide film is formed by a plasma CVD process with a reduced plasma power such that the HO content in the oxide film is less than about 2.4 wt %.
Suzuki, Kousuke. (2007). Method for fabricating a semiconductor device having an insulation film with reduced water content (U.S. Patent No. 7232720). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7232720
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile