The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 2007

Filed:

Dec. 09, 2004
Applicants:

Seok-jun Won, Seoul, KR;

Weon-hong Kim, Suwon-si, KR;

Dae-jin Kwon, Seoul, KR;

Inventors:

Seok-Jun Won, Seoul, KR;

Weon-Hong Kim, Suwon-si, KR;

Dae-Jin Kwon, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B08B 3/12 (2006.01); B08B 6/00 (2006.01); B08B 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

There is provided a method of forming a thin film for providing improved fabrication productivity. The method includes introducing a semiconductor substrate into a process chamber. A process thin film is formed on the semiconductor substrate, in which a chamber coating layer is formed on inner walls of the process chamber while the process thin film is formed. The semiconductor substrate is removed from the process chamber. A stress relief layer is formed on the chamber coating layer. After all of the above operations are repeatedly performed at least one time, an in-situ cleaning is performed on the chamber coating layer and the stress relief layer, which are alternately formed in stack on the inner walls of the process chamber.


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