The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 12, 2007

Filed:

Apr. 15, 2005
Applicants:

Mohammed H. Megherhi, Victor, NY (US);

Mike S. H. Chu, Lewiston, NY (US);

Daniel E. Mccauley, Watkins Glen, NY (US);

Elizabeth W. Römer, LD Uden, NL;

Willibrordus J. Coppens, WL Uden, NL;

Knuth Albertsen, Goch, NL;

Inventors:

Mohammed H. Megherhi, Victor, NY (US);

Mike S. H. Chu, Lewiston, NY (US);

Daniel E. McCauley, Watkins Glen, NY (US);

Elizabeth W. Römer, LD Uden, NL;

Willibrordus J. Coppens, WL Uden, NL;

Knuth Albertsen, Goch, NL;

Assignee:

Ferro Corporation, Cleveland, OH (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/06 (2006.01); C04B 35/468 (2006.01);
U.S. Cl.
CPC ...
Abstract

Multilayer ceramic chip capacitors which satisfy Y5V requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as nickel, copper, and alloys thereof may be used for internal and external electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers comprise BaTiOdoped with other metal oxides such as MgO, CaO, ZnO, MnO, ZrO, SiO, NdO, NbO, and YO.


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