The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2007
Filed:
Jan. 21, 2004
Tatsuya Usami, Kanagawa, JP;
Takashi Ishigami, Kanagawa, JP;
Tetsuya Kurokawa, Kanagawa, JP;
Noriaki Oda, Kanagawa, JP;
Tatsuya Usami, Kanagawa, JP;
Takashi Ishigami, Kanagawa, JP;
Tetsuya Kurokawa, Kanagawa, JP;
Noriaki Oda, Kanagawa, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
The present invention reduces the effective dielectric constant of the interlayer insulating film while inhibiting the decrease of the reliability of the semiconductor device, which otherwise is caused by a moisture absorption. A copper interconnect comprising a Cu filmis formed in multilayer films comprising a L-Ox™ filmand a SiOfilm. Since the L-Ox™ filmcomprises ladder-shaped siloxane hydride structure, the film thickness and the film characteristics are stable, and thus changes in the film quality is scarcely occurred during the manufacturing process.