The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2007
Filed:
Jun. 25, 2004
Hong-kook Min, Seongnam, KR;
Yong-tae Kim, Suwon, KR;
Hong-kook Min, Seongnam, KR;
Yong-tae Kim, Suwon, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor memory device included in a system-on-chip (SOC) or a microcomputer chip. The semiconductor memory device may include a flash memory cell array unit and a mask read-only memory (ROM) cell array unit which are formed in a single memory block without an isolation layer for separating the two units. Transistors included in the flash memory unit and the mask ROM unit are the same type and may have two threshold voltages. The transistor in each memory cell unit may be a split gate transistor, a metal-oxide-nitride-oxide-silicon, or silicon-oxide-nitride-oxide-silicon transistor. Further, the transistor included in the mask ROM unit in the semiconductor memory device may include enhancement transistors or depletion transistors in which a dopant ion-implanted region is formed at channel portions.